Biodiversity Heritage Library · page-29642321
Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells — Illustration, Page 80
About this illustration
BHL classifies this scanned page as Illustration. Publication: Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Publication creators (not identified as the page's illustrator): Shibib, Muhammed Ayman, 1953-. Contributing institutions: University of Florida, George A. Smathers Libraries. Bibliographic metadata supplied by BHL under CC0; image rights are separate.
No preview is available in this index. Open the original source to view the page and check its image rights.
Source connections
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
1979. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells — Illustration, Page 80. https://www.biodiversitylibrary.org/page/29642321
Cite the original work for its findings. Save a collection to share your selection of sources.